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Effect of temperature on metastable phases induced in silicon during nanoindentation

Published online by Cambridge University Press:  31 January 2011

Rajnish K. Singh ,
Paul Munroe  and
Mark Hoffman
Rajnish K. Singh*
Affiliation:
School of Materials Science and Engineering, The University of New South Wales, New South Wales 2052, Australia
Paul Munroe
Affiliation:
School of Materials Science and Engineering, The University of New South Wales, New South Wales 2052, Australia
Mark Hoffman
Affiliation:
School of Materials Science and Engineering, The University of New South Wales, New South Wales 2052, Australia
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Indentations were performed on silicon using a Berkovich indenter at loads up to 12 mN, at temperatures from 20 to 135 °C. Transmission electron microscopy revealed crystalline silicon phases in the residual indentation imprint at and above 35 °C. Also, the first reconfirmation of the occurrence of Si-VIII during unloading was observed at temperatures of 100 and 125 °C. Interestingly, at 125 °C a cavity was also observed, and an unidentifiable phase was observed at 135 °C. The observations show the strong effect of temperature on pressure-induced phase transformation in silicon.

Keywords

SemiconductingSiTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 245 - 249
Copyright
Copyright © Materials Research Society 2008

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