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Diffuse Phase Transition in Epitaxial BaTiO3 Thin Films

Published online by Cambridge University Press:  31 January 2011

Soma Chattopadhyay ,
A. R. Teren ,
Jin-Ha Hwang ,
T. O. Mason  and
B. W. Wessels
Soma Chattopadhyay
Affiliation:
Materials Research Center and Materials Science & Engineering Department, Northwestern University, 2225 North Campus Drive, Evanston, Illinois 60208
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Abstract

The thickness dependence of the dielectric properties of epitaxial BaTiO3 thin films was investigated for thicknesses ranging from 15 to 320 nm. The films were deposited by low-pressure metalorganic chemical vapor deposition on (100) MgO substrates. The relative dielectric permittivity and the loss tangent values decreased with decreasing thickness. High-temperature dielectric measurements showed that with decreasing film thickness, the ferroelectric-to-paraelectric transition temperature decreased, the relative dielectric permittivity decreased, and the phase transition was diffuse. The c/a ratio also decreased with decreasing film thickness. The observed behavior for epitaxial films of BaTiO3 was attributed to the presence of strain in the films.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 3 , March 2002 , pp. 669 - 674
Copyright
Copyright © Materials Research Society 2002

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