Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-26T23:35:56.478Z Has data issue: false hasContentIssue false
  • English
  • Français

Compositional variation of microstructure in ion-implanted AlxGa1−xAs

Published online by Cambridge University Press:  31 January 2011

B. W. Lagow ,
I. M. Robertson ,
L. E. Rehn ,
P. M. Baldo ,
J. J. Coleman  and
T. S. Yeoh
B. W. Lagow
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
I. M. Robertson
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
L. E. Rehn
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
P. M. Baldo
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439
J. J. Coleman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
T. S. Yeoh
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Get access

Abstract

The ion damage produced in alloys of AlxGa1−xAs (x = 0.6, 0.7, 0.8, and 0.85) by implantation at 77 K with Kr ions (500, 700, and 1500 keV) was studied by using Rutherford backscattering channeling and transmission electron microscopy. In addition, the accumulation of ion damage at 50 K was studied by performing the ion implantations in situ in the transmission electron microscope. In Al0.8Ga0.2As, damage accumulation at 77 K was independent of dose rate, indicating that dynamic annealing is not occurring at 77 K. The in situ studies demonstrated that planar defects are produced on warm-up from 50 K to room temperature, indicating that they are not the nucleation site for amorphization. The lower energy implantations revealed that amorphization initiated within the AlxGa1−xAs layer, showing that heterointerfaces are not required for amorphization. These results, along with the similarity of the room-temperature microstructures in the different alloys, imply that the amorphization mechanism is independent of Al content. It is proposed that the observed dependence of the amorphization dose on Al content is related to an increase in the number of cascade overlaps needed to initiate and to produce a continuous amorphous layer. A mechanism explaining the microstructural changes with composition, based on the thermal and physical properties of the alloy and on the distribution of energetic cascade events, is presented.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 2043 - 2053
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Cullis, A.G., Jacobson, D.C., Poate, J.M., Chew, N.G., Whitehouse, C.R., and Pearton, S.J., in Advances in Materials, Processing, and Devices in III–V Compound Semiconductors, edited by Sadana, D.K., Eastman, L., and Dupuis, R. (Mater. Res. Symp. Proc. 144, Pittsburgh, PA, 1989), p. 361.Google Scholar
2.Cullis, A.G., Smith, P.W., Jacobson, D.C., and Poate, J.M., J. Appl. Phys. 69, 1279 (1991).CrossRefGoogle Scholar
3.Eaglesham, D.J., Poate, J.M., Jacobson, D.C., Cerullo, M., Pfeiffer, L.N., and West, K., Appl. Phys. Lett. 58, 523 (1991).Google Scholar
4.Klatt, J.L., Alwan, J., Coleman, J.J., and Averback, R.S., in Phase Formation and Modification by Beam-Solid Interactions, edited by Was., G.S., Rehn, L.E., and Follstaedt, D.M. (Mater. Res. Symp. Proc. 235, Pittsburgh, PA, 1992), p. 235.Google Scholar
5.Klatt, J.L., Averback, R.S., Forbes, D.V., and Coleman, J.J., Appl. Phys. Lett. 63, 976 (1993).Google Scholar
6.Klatt, J.L., Averback, R.S., Forbes, D.V., and Coleman, J.J., Phys. Rev. B 48, 17629 (1993).Google Scholar
7.Turkot, B.A., Forbes, D.V., Robertson, I.M., Coleman, J.J., Rehn, L.E., Kirk, M.A., and Baldo, P.M., J. Appl. Phys. 78, 97 (1995).Google Scholar
8.Tan, H.H., Jagadish, C., Williams, J.S., Zou, J., Cockayne, D.J.H, and Sikorski, A., J. Appl. Phys. 77, 87 (1995).Google Scholar
9.Tan, H.H., Williams, J.S., Jagadish, C., Burke, P.T., and Gal, M., in Ion-Solid Interactions for Materials Modification and Processing, edited by Poker, D.B., Ila, D., Cheng, Y-T., Harriott, L.R., and Sigmon, T.W. (Mater. Res. Symp. Proc. 396, Pittsburgh, PA, 1992), p. 823.Google Scholar
10.Tan, H.H., Jagadish, C., Williams, J.S., Zou, J., and Cockayne, D.J.H, J. Appl. Phys. 80, 2691 (1996).Google Scholar
11.Turkot, B.A., Lagow, B.W., Robertson, I.M., Rehn, L.E., Baldo, P.M., Forbes, D.V., and Coleman, J.J., J. Appl. Phys. 80, 4366 (1996).CrossRefGoogle Scholar
12.Lagow, B.W., Turkot, B.A., Robertson, I.M., Rehn, L.E., Baldo, P.M., Roh, S.D., Forbes, D.V., and Coleman, J.J., in Microstructure Evolution During Irradiation, edited by Diaz de la Rubia, T., Was, G.S., Robertson, I.M., and Hobbs, L.W. (Mater. Res. Symp. Proc. 439, Pittsburgh, PA, 1997), p. 197.Google Scholar
13.Lagow, B.W., Turkot, B.A., Robertson, I.M., Coleman, J.J., Roh, S.D., Forbes, D.V., Rehn, L.E., and Baldo, P.M., IEEE J. Sel. Top. Quantum Electron. 4, 606 (1998).CrossRefGoogle Scholar
14.Jenčič, I., Bench, M.W., Robertson, I.M., and Kirk, M.A., J. Appl. Phys. 69, 1287 (1991).CrossRefGoogle Scholar
15.Cullis, A.G., Chew, N.G., Whitehouse, C.R., Jacobson, D.C., Poate, J.M., and Pearton, S.J., Appl. Phys. Lett. 55, 1211 (1989).Google Scholar
16.Gaber, A., Zillgen, H., Ehrhart, P., Partyka, P., and Averback, R.S., J. Appl. Phys. 82, 5348 (1997).Google Scholar
17.Miller, L.M. and Coleman, J.J., CRC Crit. Rev. Solid State Mater. Sci. 15, 1 (1988).Google Scholar
18.Allen, C.W., Funk, L.L., Ryan, E.A., and Taylor, A., Nucl. Instrum. Methods B B40–41, 553 (1988).Google Scholar
19.Turkot, B.A., Ph.D. Thesis, University of Illinois (1996).Google Scholar
20.Averback, R.S., Diaz de la Rubia, T., and Benedek, R., Nucl. Instrum. Methods B B33, 693 (1988).Google Scholar
21.Averback, R.S. and Ghaly, M., Nucl. Instrum. Methods B 127/128, 1 (1997).Google Scholar
22.Properties of Aluminium Gallium Arsenide, edited by Adachi, S. (IEE, Herts, United Kingdom, 1993).Google Scholar
23.Mattila, T. and Nieminen, R.N., Phys. Rev. Lett. 74, 2721 (1995).Google Scholar
24.Lagow, B.W., Ph.D. Thesis, University of Illinois (1999).Google Scholar
25.Bithell, E.G. and Stobbs, W.M., Philos. Mag. A 60, 39 (1990).CrossRefGoogle Scholar