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Atomic force microscopy, lateral force microscopy, and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms

Published online by Cambridge University Press:  31 January 2011

David J. Stein ,
Joseph L. Cecchi  and
Dale L. Hetherington
David J. Stein
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, 209 Farris Engineering Center, Albuquerque, New Mexico 87131
Joseph L. Cecchi
Affiliation:
Department of Chemical and Nuclear Engineering, University of New Mexico, 209 Farris Engineering Center, Albuquerque, New Mexico 87131
Dale L. Hetherington
Affiliation:
Microelectronics Development Laboratory, Sandia National Laboratories, MS 1084, P.O. Box 5800, Albuquerque, New Mexico 87185–5800
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Abstract

We investigated various interactions between alumina and tungsten films that occur during chemical mechanical polishing (CMP). Atomic force microscopy surface topography measurements of post-CMP tungsten indicate that the roughness of the tungsten is independent of polish pressure and rotation rate. Pure mechanical abrasion is therefore an unlikely mechanism of material removal during CMP. Transmission electron microscopy images corroborate these results. The adhesion force between alumina and tungsten was measured in solution. The adhesive force increased with KIO3 concentration. Friction forces were measured in solution using lateral force microscopy. The friction force in buffered solutions was independent of KIO3 concentration. These results indicate that interactions other than purely mechanical interactions exist during CMP.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 9 , September 1999 , pp. 3695 - 3706
Copyright
Copyright © Materials Research Society 1999

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