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Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films

Published online by Cambridge University Press:  31 January 2011

An Hardy ,
Sven Van Elshocht ,
Jan D’Haen ,
Olivier Douhéret ,
Stefan De Gendt ,
Christoph Adelmann ,
Matty Caymax ,
Thierry Conard ,
Thomas Witters  and
Hugo Bender
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An Hardy
Affiliation:
Hasselt University, Institute for Materials Research, Laboratory of Inorganic and Physical Chemistry, B-3590 Diepenbeek, Belgium; and XIOS Hogeschool Limburg, Department of Industrial Sciences and Technology (IWT), Universitaire Campus, B-3590 Diepenbeek, Belgium
Sven Van Elshocht
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Jan D’Haen
Affiliation:
IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium; and Hasselt University, Institute for Materials Research, B-3590 Diepenbeek, Belgium
Olivier Douhéret
Affiliation:
IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium
Stefan De Gendt
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium; and KULeuven, Department of Chemistry, B-3001 Heverlee, Belgium
Christoph Adelmann
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Matty Caymax
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Thierry Conard
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Thomas Witters
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Hugo Bender
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Olivier Richard
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Marc Heyns
Affiliation:
IMEC vzw, B-3001 Heverlee, Belgium
Marc D’Olieslaeger
Affiliation:
IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium, and Hasselt University, Institute for Materials Research, B-3590 Diepenbeek, Belgium
Marlies K. Van Bael*
Affiliation:
Hasselt University, Institute for Materials Research, Laboratory of Inorganic and Physical Chemistry, B-3590 Diepenbeek, Belgium; and IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium
Jules Mullens*
Affiliation:
Hasselt University, Institute for Materials Research, Laboratory of Inorganic and Physical Chemistry, B-3590 Diepenbeek, Belgium
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)Address all correspondence to these authors. e-mail: [email protected]
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Abstract

Ultrathin lanthanide (Nd, Pr, Eu, Sm) oxide films with functional dielectric properties down to 3.3 nm thickness were deposited by aqueous chemical solution deposition (CSD) onto hydrophilic SiO2/Si substrates. Precursor solutions were prepared from the oxides via an intermediate, solid Ln(III)citrate. A film heat treatment scheme was derived from thermogravimetric analysis of the precursor gels, showing complete decomposition by 600 °C. Crystalline phase formation in the films depended on the lanthanide, annealing temperature, and citric acid content in the precursor. Through variation of the precursor concentration and number of deposited layers, thickness series of uniform films were obtained down to ∼3 nm. The film uniformity was demonstrated both by atomic force microscopy and cross-section transmission electron microscopy. The lanthanide oxide films possessed good dielectric properties. It was concluded that aqueous CSD allows deposition of uniform ultrathin films and may be useful for the evaluation of new high-k candidate materials.

Keywords

Solution depositionDielectricLanthanide
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 12 , December 2007 , pp. 3484 - 3493
Copyright
Copyright © Materials Research Society 2007

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