The expression used for electric field in the article being discussed is not appropriate for the experimental conditions, but there is a built-in electric field present that affects Sb diffusion. Thus the calculated values of D=i are reasonably within the experimental error of the data on which the calculations are based. Our conclusions that V− vacancies do not play an important role in Sb diffusion and that Sb–B pairs are responsible for retarded Sb diffusion in high-concentration B-doped Si are supported.