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Preferred orientation and microstructure of Ni-Zn-Cu ferrite thin films deposited by rf magnetron sputtering

Published online by Cambridge University Press:  03 March 2011

Hae Seok Cho ,
Min Hong Kim  and
Hyeong Joon Kim
Hae Seok Cho
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, 151-742, Seoul, Korea
Min Hong Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, 151-742, Seoul, Korea
Hyeong Joon Kim
Affiliation:
Department of Inorganic Materials Engineering, Seoul National University, 151-742, Seoul, Korea
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Abstract

We have investigated the effects of process parameters such as rf power, substrate, and gas pressure PAr on preferred orientation, microstructure, and magnetic properties of Ni-Zn-Cu ferrite thin films deposited by conventional rf magnetron sputtering. The texture structure was developed in the ferrite films deposited on the SiO2/Si(100) substrate at low rf power conditions. The ferrite film on the Si(111) substrate always had (111) texture irrespective of process parameters due to lattice matching, but the texture of the ferrite film on SiO2/Si(100) changed from (111) to (100) and finally returned to (111) orientation again with decreasing PAr. Such behavior would occur presumably due to the characteristic atomic stacking sequence corresponding to a given condition of the ion bombardment. The ferrite films deposited at low PAr had a denser microstructure consisting of tightly packed columnar grains with a smoother surface, better adhesion to the substrate, and better crystallinity than those at high PAr. Hc‖ of ferrite film deposited at low PAr was larger than that at high PAr and also larger than Hc⊥ of that deposited at the same PAr because larger compressive stress was induced at low PAr than at high PAr.

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Articles
Information
Journal of Materials Research , Volume 9 , Issue 9 , September 1994 , pp. 2425 - 2433
Copyright
Copyright © Materials Research Society 1994

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References

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