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Phase-formation kinetics of xerogel and electrical properties of sol-gel-derived BaxSr1−xTiO3 thin films

Published online by Cambridge University Press:  31 January 2011

Soo-Ik Jang ,
Byung-Cheul Choi  and
Hyun M. Jang
Soo-Ik Jang
Affiliation:
Department of Materials Science and Engineering, and Laboratory for Physical Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Byung-Cheul Choi
Affiliation:
Department of Materials Science and Engineering, and Laboratory for Physical Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
Hyun M. Jang*
Affiliation:
Department of Materials Science and Engineering, and Laboratory for Physical Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
*
a)Author to whom correspondence should be addressed.
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Abstract

Chemically homogeneous BaxSr1−xTiO3 (BST with x = 0.6) multicomponent sol was synthesized using barium oxide, strontium chloride, and Ti-alkoxide (titanium isopropoxide) as starting materials. Acetylacetone (AcAc) was introduced as a chelating agent to reduce a rapid hydrolysis rate of Ti-alkoxide. Analysis of Fourier transform infrared spectroscopy (FTIR) spectra indicated that the stabilization of BST sols was achieved by the chelation of Ti-alkoxide with the enolic form of AcAc. The effective activation energy associated with the formation of perovskite phase from the xerogel was estimated by the differential thermal analysis (DTA) experiment using various heating rates. It is approximately 400 kJ/mol with the Avrami exponent (reaction order) of n = 1, suggesting that the growth of perovskite BST is diffusion-controlled. The calculated half-life time suggests that the minimum temperature for the crystallization which is practically accessible to a real processing is approximately 600 °C. The BST thin film fabricated on the “Pt(150 nm)/Ti(100 nm)/SiO2(100 nm)/Si” substrate exhibited the relative dielectric permittivity of 310 and can be represented by an equivalent circuit consisting of a resistive component originated from the bulk perovskite grain and a parallel RC component resulting from the presence of the grain boundary.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1327 - 1334
Copyright
Copyright © Materials Research Society 1997

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