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Nitrogen Effects on Crystallization Kinetics of Amorphous TiOxNy Thin Films

Published online by Cambridge University Press:  31 January 2011

Kyle Hukari ,
Rand Dannenberg  and
E. A. Stach
Kyle Hukari
Affiliation:
AFG Development Center, Petaluma, California 94954
Rand Dannenberg
Affiliation:
AFG Development Center, Petaluma, California 94954
E. A. Stach
Affiliation:
National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
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Abstract

The crystallization behavior of amorphous TiOxNy (x ≫ y) thin films was investigated by in situ transmission electron microscopy. The Johnson–Mehl–Avrami–Kozolog (JMAK) theory was used to determine the Avrami exponent, activation energy, and the phase velocity pre-exponent. Addition of nitrogen inhibited diffusion, increasing the nucleation temperature, while decreasing the growth activation energy. Kinetic variables extracted from individual crystallites were compared to JMAK analysis of the fraction transformed, and a change of 6% in the activation energy led to agreement between the methods. From diffraction patterns and index of refraction the crystallized phase was found to be predominantly anatase.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 3 , March 2002 , pp. 550 - 555
Copyright
Copyright © Materials Research Society 2002

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References

Szczyrbowski, J., Bräuer, G., Ruske, M., Schilling, H., and Zmelty, A., Thin Solid Films 351, 254 (1999).CrossRefGoogle Scholar
Macleod, H.A., Thin Optical Filters, 2nd ed. (Adam Hilger, Bristol, United Kingdom, 1986), pp. 391–393.Google Scholar
Dannenberg, R. and Greene, P., Thin Solid Films 360, 122 (2000).CrossRefGoogle Scholar
Dannenberg, R., Greene, P., 5th Int. Symp. on Sputtering and Plasma Processes (ISSP), Kanazawa, Japan, June 16–18 (1999), p. 116.Google Scholar
Dannenberg, R. and Greene, P., SVC 42nd Annual Technical Conference Proceedings, Chicago IL, April 17–22 (Society of Vacuum Coaters, Washington, DC, 1999), p. 23.Google Scholar
Amor, S.B., Baud, G., Besse, J.P., and Jacquat, M., Mater. Sci. Eng. B47, 110 (1997).CrossRefGoogle Scholar
Aidla, A., Uustare, T., Kiisler, A-A., Aarik, J., and Sammelselg, V., Thin Solid Films 305, 270 (1997).Google Scholar
Krishna, G.M., Kanakaraju, S., and Mohan, S., Vacuum 46, 33 (1995).Google Scholar
Rizzo, A., Mirenghi, L., Tapfer, L., Alvisi, M., Vasanelli, L., Sarto, F., and Scaglione, S., SPIE 2776, 392 (1996).Google Scholar
Horn, M.C., Schwerdtfeger, C.F., and Meyer, E.P., Z. Kristallogr. 136, 273 (1972).CrossRefGoogle Scholar
Meagher, E.P. and George, A.L., Canadian Mineralogist 17, 77 (1979).Google Scholar
Fukushima, K. and Ymada, I., Nucl. Instrum. Phys. Res. B 112, 116 (1996).CrossRefGoogle Scholar
Jin, P. and Maruno, S., Jpn. J. Appl. Phys. 30, 2058 (1991).Google Scholar
Bittar, A., Cochrane, D., and Caughley, S., J. Vac. Sci. Technol. A 15, 223 (1997).CrossRefGoogle Scholar
Johnson, W.A. and Mehl, R.F., Trans. AIME 135, 416 (1939).Google Scholar
Avrami, M., J. Chem. Phys. 7, 1103 (1939).CrossRefGoogle Scholar
Levine, L.E., K. Lakshmi Narayan, and Kelton, K.F., J. Mater. Res. 12, 124 (1997).CrossRefGoogle Scholar
Seo, H., Jeong, T-H., Park, J-M., Yeon, C., Kim, S-J., and Kim, S-Y., Jpn. J. Appl. Phys., 39, 745 (2000).Google Scholar
Tauc, J., Grigorovichi, R., and Yancu, Y., Phys. Solid State 15, 627 (1966).CrossRefGoogle Scholar
Porter, D.A. and Easterling, K.E., Phase Transformations in Metals and Alloys (Chapman & Hall, New York, 1981), p. 289.Google Scholar