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Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor

Published online by Cambridge University Press:  01 December 2004

F.S. Liu ,
Q.L. Liu ,
J.K. Liang ,
G.B. Song ,
L.T. Yang ,
J. Luo ,
Y.Q. Zhou ,
H.W. Dong  and
G.H. Rao
F.S. Liu
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China; and College of Material Science and Engineering, Southwest University of Science and Technology,Mianyang, 621002, People’s Republic of China
Q.L. Liu
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
J.K. Liang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China; and International Centre for Materials Physics, Academia Sinica, Shenyang 110016, People’s Republic of China
G.B. Song
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China; and College of Material Science and Engineering, Southwest University of Science and Technology,Mianyang, 621002, People’s Republic of China
L.T. Yang
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
J. Luo
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
Y.Q. Zhou
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
H.W. Dong
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
G.H. Rao
Affiliation:
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
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Abstract

Gallium nitride (GaN) has been synthesized by reacting gallium trichloride with ammonia (NH3) at low temperatures ranging from 500 to 1000 °C for 12 h. X-ray diffraction, transmission electron microscopy, infrared, and Raman backscattering spectra revealed that the synthesized GaN powder consists of single-phase nano-sized crystallites with the wurtzite-type structure. The average size of the crystals decreases with the reaction temperature from approximately ∼63 nm at 1000 °C to ∼5 nm at 500 °C. GaOCl and ϵ–Ga2O3 are the intermediate products during synthesis of the GaN. Characteristic shifts of the Raman peaks are associated with the change in crystal size. The band-edge emission of GaN at 361 nm was observed on room temperature photoluminescence spectra exclusively for the sample synthesized at 1000 °C, while a new and broad emission band appeared with the center ranging from 827 to 765 nm for the samples synthesized between 500 and 800 °C.

Keywords

LuminescenceSynthesisCrystal growth
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3484 - 3489
Copyright
Copyright © Materials Research Society 2004

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