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Lattice site and photoluminescence of erbium implanted in α–Al2O3

Published online by Cambridge University Press:  31 January 2011

G. N. van den Hoven ,
A. Polman ,
E. Alves ,
M. F. da Silva ,
A. A. Melo  and
J. C. Soares
G. N. van den Hoven
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
A. Polman
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
E. Alves
Affiliation:
Dep. de Física, ITN, Estrada National 10, P-2685 Sacavém, Portugal
M. F. da Silva
Affiliation:
Dep. de Física, ITN, Estrada National 10, P-2685 Sacavém, Portugal
A. A. Melo
Affiliation:
Dep. de Física, ITN, Estrada National 10, P-2685 Sacavém, Portugal
J. C. Soares
Affiliation:
Centro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto, 2, 1699, Lisboa Codex, Portugal
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Abstract

Single-crystal sapphire (α–Al2O3) was implanted at room temperature with 200 keV erbium ions to a fluence of 8 × 1013 cm–2. Ion channeling using 1.6 MeV He+ shows that the crystal suffers little damage for this low dose implant. Angular scans through axial and planar directions in the crystal indicate that 70% of the Er atoms reside on displaced octahedral sites in the α–Al2O3 lattice. As pure Al2O3 has a high density of free octahedral sites, this explains why high concentrations of Er can be dissolved in this material. Smaller fractions of Er are found on tetrahedral (20%) and random (10%) sites. The samples exhibit strongly peaked photoluminescence spectra around 1.5 μm, due to intra-4f transitions in Er3+, indicating the existence of well-defined sites for the luminescing Er3+ ions. It is concluded that the octahedral site is the dominating optically active site in the lattice.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 5 , May 1997 , pp. 1401 - 1404
Copyright
Copyright © Materials Research Society 1997

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