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Fullerene-tetracyanoquinodimethane thin film and novel electrical bistability

Published online by Cambridge University Press:  31 January 2011

H. J. Gao ,
Z. Q. Xue ,
Q. D. Wu  and
S. J. Pang
H. J. Gao*
Affiliation:
Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences, P. O. Box 2724, Beijing 100080, and Department of Radio-Electronics, Peking University, Beijing 100871, China
Z. Q. Xue
Affiliation:
Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences, P. O. Box 2724, Beijing 100080, and Department of Radio-Electronics, Peking University, Beijing 100871, China
Q. D. Wu
Affiliation:
Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences, P. O. Box 2724, Beijing 100080, and Department of Radio-Electronics, Peking University, Beijing 100871, China
S. J. Pang
Affiliation:
Beijing Laboratory of Vacuum Physics, Chinese Academy of Sciences, P. O. Box 2724, Beijing 100080, and Department of Radio-Electronics, Peking University, Beijing 100871, China
*
a) Author to whom all correspondence should be addressed.
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Abstract

We report the electrical bistability of C60-tetracyanoquinodimethane (TCNQ) thin films fabricated by using an ionized-cluster-beam method in a high vacuum system. The films were characterized by transmission electron microscopy and electronic absorption spectroscopy. The spectroscopic results showed evidence of the formation of the charge-transfer complex system in C60-TCNQ thin films, and the TEM results revealed the microstructure of the films. The film thickness is ∼100 nm. The electromotive intensity at the transition point was of the order of 106 V/m. The possible mechanism of the electrical phenomena of the films is discussed in the paper.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 4 , April 1996 , pp. 859 - 860
Copyright
Copyright © Materials Research Society 1996

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