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Fabrication of ultrathin film capacitors by chemical solution deposition

Published online by Cambridge University Press:  31 January 2011

Geoff L. Brennecka  and
Bruce A. Tuttle
Geoff L. Brennecka*
Affiliation:
Sandia National Laboratories, Electronic and Nanostructured Materials, Albuquerque, New Mexico 87185-1411
Bruce A. Tuttle
Affiliation:
Sandia National Laboratories, Electronic and Nanostructured Materials, Albuquerque, New Mexico 87185-1411
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ⩾1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Thus, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.

Keywords

Solution depositionNanoscaleFerroelectric
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2868 - 2874
Copyright
Copyright © Materials Research Society 2007

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References

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