Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-23T11:01:15.190Z Has data issue: false hasContentIssue false

Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization

Published online by Cambridge University Press:  03 March 2011

Hyun-Goo Kang
Affiliation:
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea; and Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Korea
Hyung-Soon Park
Affiliation:
Hynix Semiconductor Inc., Icheon-si, Kyungki-do 467-701, Korea
Ungyu Paik*
Affiliation:
Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Korea
Jea-Gun Park*
Affiliation:
Nano-SOI Process Laboratory, Hanyang University, Seoul 133-791, Korea
*
a) Address all correspondence to these authors. e-mail: [email protected]
Get access

Abstract

The effects of the molecular weight and concentration of poly(acrylic acid) (PAA) with different primary abrasive sizes in ceria slurry on the nitride film loss, removal rate, film surface roughness, and removal selectivity of SiO2-to-Si3N4 films were investigated by performing chemical mechanical polishing (CMP) experiments using blanket and patterned wafers. In the case of the blanket wafers, we found that for a lower PAA molecular weight, the removal selectivity of SiO2-to-Si3N4 films increased more significantly with increasing PAA concentration in slurry containing a larger primary abrasive size. For the patterned wafers, with a higher PAA molecular weight in the ceria slurry suspension, the erosion of the Si3N4 film was less, but the removed amount was also smaller, and the surface roughness became worse after CMP. These results can be qualitatively explained by the layer of PAA adsorbed on the film surface, in terms of electrostatic interaction and rheological behavior.

Keywords

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Wolf, S.: Silicon Processing for the VLSI Era: Process Integration, Vol. 2, (Lattice Press, Sunset Beach, CA, 1990), Chap. 13, p. 24.Google Scholar
2Quirk, M. and Serda, J.: Semiconductor Manufacturing Technology (Prentice Hall, NJ, 2001), Chap. 9, p. 199.Google Scholar
3Cheng, J.Y., Lei, T.F., and Chao, T.S.: A novel shallow trench isolation technique. Jpn. J. Appl. Phys. 36, 1319 (1997).CrossRefGoogle Scholar
4Park, H.S., Kim, K.B., Hong, C.K., Chung, U.I., and Lee, M.Y.: Control of microscratches in chemical-mechanical polishing process for shallow trench isolation. Jpn. J. Appl. Phys. 37, 5849 (1998).CrossRefGoogle Scholar
5Hoshino, T., Kurata, Y., Terasaki, Y., and Susa, K.: Mechanism of polishing of SiO2 films by CeO2 particles. J. Non-Cryst. Solids 283, 129 (2001).CrossRefGoogle Scholar
6Nojo, H., Kodera, M., and Nakata, R.: Slurry engineering for self-stopping, dishing free SiO2-CMP, Proc. IEEE Idem, San Francisco, CA, 1996 (The Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1996), p. 349.Google Scholar
7Kim, J.Y., Kim, S.K., Paik, U., Katoh, T., and Park, J.G.: Effect of crystallinity of ceria particles on the PETEOS removal rate in chemical mechanical polishing for shallow trench isolation. J. Kor. Phys. Soc. 41, 413 (2002).Google Scholar
8Kang, H.G., Katoh, T., Park, H.S., Paik, U., and Park, J.G.: Effects of abrasive size of polycrystalline nano ceria slurry on shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 43, L365 (2004).CrossRefGoogle Scholar
9Kang, H.G., Katoh, T., Lee, W.M., Paik, U., and Park, J.G.: Dependence of nanotopography impact on abrasive size and surfactant concentration in ceria slurry for shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 43, L1 (2004).CrossRefGoogle Scholar
10Park, J.G., Katoh, T., Yoo, H.C., Lee, D.H., and Paik, U.: Spectral analyses on pad dependency of nanotopography impact on oxide chemical mechanical polishing. Jpn. J. Appl. Phys. 41, L17 (2002).CrossRefGoogle Scholar
11Kang, H.G., Lee, M.Y., Park, H.S., Paik, U., and Park, J.G.: Dependence of pH, molecular weight, and concentration of surfactant in ceria slurry on saturated nitride removal rate in shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 44, 4752 (2005).CrossRefGoogle Scholar
12Kang, H.G., Katoh, T., Park, H.S., Paik, U., and Park, J.G.: Dependence of non-Prestonian behavior of ceria slurry with anionic surfactant on the abrasive concentration and size in shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 44, 4752 (2006).CrossRefGoogle Scholar
13Hirai, K., Ohtsuki, H., Ashizawa, T., and Kurata, Y.: High performance CMP slurry for STI. Hitachi Chem. Tech. Report 35, 17 (2000).Google Scholar
14Kim, S.K., Lee, S., Paik, U., Katoh, T., and Park, J.G.: Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosilicate and chemically vapor deposited Si3N4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 18, 2163 (2003).CrossRefGoogle Scholar
15America, W.G. and Babu, S.V.: Slurry additive effects on the suppression of silicon nitride removal during CMP. Electrochem. Solid-State Lett. 7, G327 (2004).CrossRefGoogle Scholar
16Wang, L., Sigmund, W.M., and Aldinger, F.: Systematic approach for dispersion of silicon nitride powder in organic media: II. Dispersion of the powder. J. Am. Ceram. Soc. 83, 697 (2000).CrossRefGoogle Scholar
17Philipossian, A. and Hanazono, M.: Tribology and fluid dynamics characterization of cerium oxide slurries. http:\\www.innovative-planarization.com. (2001).Google Scholar
18Kim, S.K., Yoon, P.H., Paik, U., Katoh, T., and Park, J.G.: Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation. Jpn. J. Appl. Phys. 43, 7427 (2004).CrossRefGoogle Scholar
19Hu, Y.Z., Gutmann, R.J., and Chow, T.P.: Silicon nitride chemical mechanical polishing mechanism. J. Electrochem. Soc. 145, 3919 (1998).CrossRefGoogle Scholar
20Kim, S.D., Hwang, I.S., and Park, H.M.: Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication. J. Vac. Sci. Technol. B 20, 918 (2002).CrossRefGoogle Scholar
21Kim, D.H., Kang, H.G., Kim, S.K., Paik, U., and Park, J.G.: Effect of calcination process on synthesis of ceria particles, and its influence on STI CMP performance. Jpn. J. Appl. Phys. 45, 4893 (2006).CrossRefGoogle Scholar
22Hackley, V.A.: Colloidal processing of silicon nitride with poly (acrylic acid): I, adsorption and electrostatic interactions. J. Am. Ceram. Soc. 80, 2315 (1997).CrossRefGoogle Scholar
23Boning, D., Lee, B., Oji, C., Ouma, D., Park, T., Smith, T., and Tugbawa, T.: Pattern dependent modeling for CMP optimization and control, in Chemical-Mechanical Polishing–Fundamentals and Challenges, edited by Babu, S.V., Danyluk, S., Krishnan, M. and Tsujimura, M. (Mater. Res. Soc. Symp. Proc. 566, Warrendale, PA, 2000), P5.5, p. 761.Google Scholar
24Boning, D. and Lee, B.: Nanotopography issues in shallow trench isolation CMP. MRS Bull. 27(1), 761 (2002).CrossRefGoogle Scholar
25Katoh, T., Kang, H.G., Paik, U., and Park, J.G.: Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry. Jpn. J. Appl. Phys. 42, 1150 (2003).CrossRefGoogle Scholar
26Cho, C.W., Kim, S.K., Park, J.G., Sigmund, W.M., and Paik, U.: Atomic force microscopy study of the role of molecular weight of poly(acrylic acid) in chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 21, 473 (2006).CrossRefGoogle Scholar
27Yu, C., Fazan, P.C., Mathews, V.K., and Doan, T.T.: Dishing effects in a chemical mechanical polishing planarization process for advanced trench isolation. Appl. Phys. Lett. 61, 1344 (1992).CrossRefGoogle Scholar
28Boyd, J.M. and Ellul, J.P.: Near-global planarization oxide-filled shallow trenches using chemical mechanical polishing. J. Electrochem. Soc. 143, 3718 (1996).CrossRefGoogle Scholar
29Bonner, B.A., Iyer, A., Kumar, D., Osterheld, T.H., Nickles, A.S., and Flynn, D.: Development of a direct polish process for shallow trench isolation modules, in Chemical Mechanical Planarization for ULSI Multilevel Interconnection (CMP-MIC Spring Meeting, 2001), p. 572.Google Scholar
30Cooperman, S.S., Nasr, A.I., and Grula, G.J.: Optimization of a shallow trench isolation process for improved planarization. J. Electrochem. Soc. 142, 3180 (1995).CrossRefGoogle Scholar
31Basim, G.B. and Boudgil, B.M.: Role of interaction forces in controlling the stability and polishing performance of CMP slurries. J. Colloid Interface Sci. 256, 137 (2002).CrossRefGoogle Scholar
32Paik, U., Hackley, V.A., Lee, J., and Lee, S.: Effect of poly(acrylic acid) and poly(vinyl alcohol) on the solubility of colloidal BaTiO3 in an aqueous medium. J. Mater. Res. 18, 1266 (2005).CrossRefGoogle Scholar
33Carter, P.W. and Johns, T.P.: Interfacial reactivity between ceria and silicon dioxide and silicon nitride surfaces. Electrochem. Solid-State Lett. 8, G221 (2005).CrossRefGoogle Scholar
34Rajan, K., Singh, R., Adler, J., Mahajan, U., Rabinovich, Y., and Moudgil, B.: Surface interaction forces in chemical-mechanical polishing. Thin Solid Films 308–309, 529 (1997).CrossRefGoogle Scholar
35Togrul, H. and Arslan, N.: Flow properties of sugar beet pulp cellulose and intrinsic viscosity-molecular weight relationship. Carbohydrate Polym. 54, 63 (2003).CrossRefGoogle Scholar
36Shen, Q., Mu, D., Yu, L.W., and Chen, L.: A simplified approach for evaluation of the polarity parameter for polymer using the K coefficient of the Mark–Houwink–Sakurada equation. J. Colloid Interface Sci. 275, 30 (2004).CrossRefGoogle Scholar
37Reed, J.S.: Principles of Ceramics Processing 2nd ed. (Wiley Interscience, New York, 1995), Chap. 17, p. 323.Google Scholar
38Hunter, R.J.: Introduction to Modern Colloid Science (Oxford University Press Inc., New York, 1993), Chap. 1, p. 204.Google Scholar
39Billmeyer, F.W.: Textbook of Polymer Science (Wiley Interscience, New York, 1984), p. 7.Google Scholar
40Choibowski, S. and Wisniewska, M.: Study of electrokinetic properties and structure of adsorbed layers of polyacrylic acid and polyacrylamide at Fe2O3-polymer solution interface. Colloids Surf. A 208, 131 (2002).CrossRefGoogle Scholar