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Characterization of InP wafers by use of a system for high resolution photoluminescence imaging

Published online by Cambridge University Press:  31 January 2011

Th. Vetter  and
A. Winnacker
Th. Vetter
Affiliation:
Siemens Corporate Research and Development, Erlangen, Germany
A. Winnacker
Affiliation:
Siemens Corporate Research and Development, Erlangen, Germany
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Abstract

An apparatus for acquisition of highly resolved macroscopic photoluminescence topograms has been developed, using a laser scanner for PL excitation, and a linear diode array as imaging device. As a typical application, room temperature PL-topograms of various 2″ In P wafers are presented and discussed. Substrate inhomogeneities revealed in these topograms are growth striations, dendrites, and subsurface damage from wafer handling and processing.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 5 , May 1991 , pp. 1055 - 1060
Copyright
Copyright © Materials Research Society 1991

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