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Piezoelectric materials parameters for piezoelectric thin films in GHz applications

Published online by Cambridge University Press:  15 May 2009

P. Muralt ,
J. Conde ,
A. Artieda ,
F. Martin  and
M. Cantoni
P. Muralt*
Affiliation:
Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne, Switzerland
J. Conde
Affiliation:
Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne, Switzerland
A. Artieda
Affiliation:
Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne, Switzerland
F. Martin
Affiliation:
Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne, Switzerland
M. Cantoni
Affiliation:
Electron Microscopy Center, Ecole Polytechnique Federale de Lausanne EPFL, Switzerland.
*
Corresponding author: P. Muralt E-mail: [email protected]
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Abstract

Piezoelectric thin films have existing and promising new applications in microwave filter technologies. The final performance depends on many parameters, and very specifically on the materials properties of each involved material. In this article, materials and properties for thin-film bulk acoustic wave resonators are discussed on some selected issues: the piezoelectric coefficients and acoustic losses of AlN, the relation of the first one with microstructural parameters, the inclusion of parasitic elements, and the merits of and problems with ferroelectric materials.

Keywords

Aluminum nitrideFerroelectricsBulk acoustic wavesThin films
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Issue 1 , February 2009 , pp. 19 - 27
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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