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High Resolution X-ray Diffractometry and Topography of Float-Zone GaAs Crystals Grown in Microgravity

Published online by Cambridge University Press:  06 March 2019

N. Loxley
Affiliation:
Bede Scientific Instruments, Lindsey ParkBowburnDurham DH6 5PF, U.K
C. D. Moore
Affiliation:
Department of Physics, University of Durham, South RoadDurhamDHl 3LE, U.K.
M. Safa
Affiliation:
on leave from :, Dept. of Physics, Isfahan University of Technology, Isfahan Iran
B. K. Tanner
Affiliation:
Bede Scientific Instruments, Lindsey ParkBowburnDurham DH6 5PF, U.K
G. F. Clark
Affiliation:
Daresbury Laboratory, DaresburyWarringtonWA4 4AD, U.K.
F. M. Herrmann
Affiliation:
Institut f. Werkstofiwissenschaften, Kristaliabor Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen Martensstr.7, Germany
G. Mueller
Affiliation:
Institut f. Werkstofiwissenschaften, Kristaliabor Friedrich-Alexander-Universitaet Erlangen-Nuernberg 91058, Erlangen Martensstr.7, Germany
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Abstract

High resolution Bragg-case X-ray double and triple axis diffractometry and Laue-case white beam synchrotron X-ray topography experiments have been performed on undoped [001] oriented float-zone GaAs crystals have been grown under microgravity conditions in space on the D2 mission. Near the seed, excellent anomalous transmission was achieved and a clear cellular structure of dislocations observed. The double and triple axis rocking curves were comparable with those from semi-insulating terrestrial material. Following a heater failure, the molten zone height dropped and reciprocal space maps revealed a long ridge of scatter transverse to the diffraction vector direction. This corresponds to the presence of a distribution of sub-grains containing little internal strain. Continued growth resulted in twin formation.

Type
III. Applications of Diffraction to Semiconductors and Films
Copyright
Copyright © International Centre for Diffraction Data 1994

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