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Characterization of Epitaxial Films by X-Ray Diffraction

Published online by Cambridge University Press:  06 March 2019

Armin Segmüller
Armin Segmüller*
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
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Abstract

In this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.

Type
Research Article
Information
Advances in X-Ray Analysis , Volume 29: Thirty-Fourth Annual Conference on Applications of X-ray Analysis, August 5-9, 1985 , 1985 , pp. 353 - 366
Copyright
Copyright © International Centre for Diffraction Data 1985

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