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Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction

Published online by Cambridge University Press:  06 March 2019

S. S. Iyengar ,
M. W. Santana ,
H. Windischmann  and
P. Engler
S. S. Iyengar
Affiliation:
The Standard Oil Company 4440 Warrensville Center Road Cleveland, Ohio 44128
M. W. Santana
Affiliation:
The Standard Oil Company 4440 Warrensville Center Road Cleveland, Ohio 44128
H. Windischmann
Affiliation:
The Standard Oil Company 4440 Warrensville Center Road Cleveland, Ohio 44128
P. Engler
Affiliation:
The Standard Oil Company 4440 Warrensville Center Road Cleveland, Ohio 44128
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Extract

Due to the current high interest in characterizing epitaxially deposited thin films required by the electronics industry as well as the increased attention in elucidating reactions between solid surfaces and the environment (e.g., corrosion), investigators have increased their efforts in developing X-ray procedures for analyzing films and surfaces less than 2 μm thick. For example, an entire session of the 1985 Denver Conference on Applications of X-ray Analysis was devoted to this subject and an excellent review of X-ray diffraction techniques for characterizing thin films was recently published by Segmuller (1). Specific techniques include grazing incidence diffraction (2, 3), double crystal diffraction (3), and the use of the Seemann-Bohlin focusing geometry (4, 5).

Type
VIII. Advances in XRD Instrumentation and Procedures
Information
Advances in X-Ray Analysis , Volume 30: Thirty-Fifth Annual Conference on Applications of X-ray Analysis, August 4-8, 1986 , 1986 , pp. 457 - 464
Copyright
Copyright © International Centre for Diffraction Data 1986

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References

1. Segmuller, A. and Murakami, M.,“Characterization of Thin Films by X-ray Diffraction ” in “Thin Films from Free Atoms and Particles”, Klabunde, J., ed.. Academic Press, New York, 1985, pp. 325–351.Google Scholar
2. Marra, W.C., Eisenberger, P., and Chao, A.Y., “X-ray TotaI-ExternaIReflection- Bragg Diffraction : A Structural Study of the GaAs-AI. nterface”, J. Appl. Phys., 50, 6927 (1979).Google Scholar
3. Segmuller, A., “Characterization of Epitaxial Films by X-ray Diffraction”, in “Advances in X-ray Analysis”, in press.Google Scholar
4. Matyi, R.J., “Characterization of Tungsten Silicid e and Titanium Silicide Thin Films with a Fully Automated Seemann-BohIin Diffractometer ”, in “Advances in X-ray Analysis”, in press.Google Scholar
5. Parrish, W. and Mack, M., “Seemann-BohIin X-ray Diffractometry. I. Instrumentation”, Acta Cryst., 23, 637 (1967).Google Scholar
6. Cullity, B.D., “Elements of X-ray Diffraction”, Addison-Wesley, Reading, MA. 1978, p p. 134-135, 292–294, 502–503.Google Scholar