No CrossRef data available.
Article contents
Near-Surface Analysis of Semicondutor Using Grazing Incidence X-Ray Fluorescence
Published online by Cambridge University Press: 06 March 2019
Summary
The X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.
- Type
- VIII. Synchrotron Radiation and Other Applications of XRF
- Information
- Copyright
- Copyright © International Centre for Diffraction Data 1987