Research Article
Effects of H+-Implantation On Electron Traps In N-Type Si Induced by P+ Pre-Implantation
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- 15 February 2011, 281
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Evaluation Of Proton-Induced Deep Levels In n-Si
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- 15 February 2011, 287
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EPR Study Of Defect Formation In H Implanted And Annealed CZ Si
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- 15 February 2011, 293
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Ctivation Energies Of Interstitial Oxygen Diffusion In Silicon Containing Hydrogen
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- 15 February 2011, 299
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Effect Of Pressure On Boron Diffusion In Silicon
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- 15 February 2011, 305
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Dislocation Interactions And Their Impact On Electrical Properties Of GeSi-Based Heterostructures
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- 15 February 2011, 313
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Dislocation-Related Photoluminescence In Strain-Relaxed Si1−xGex. Buffer Layer Structures
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- 15 February 2011, 325
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Room Temperature Electroluminescence From D1 Dislocation Centers In Silicon
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- 15 February 2011, 331
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Dislocation Velocities In Gesi Bulk Alloys
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- 15 February 2011, 337
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Influence Of Substrate Off-Cut On The Defect Structure In Relaxed Graded Si-Ge/Si Layers
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- 15 February 2011, 343
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Hrtem Study Of Dislocations In Gesi/Si Heterostructures Grown By VPE
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- 15 February 2011, 349
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Defects In Low Temperature Mbe-Grown Si And Sige/Si Structures
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- 15 February 2011, 355
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The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures
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- 15 February 2011, 367
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Effect of Stresses on Defect Nucleation in Si1−.xGex/Si Heteroepitaxial Systems
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- 15 February 2011, 373
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Hall Effect Measurements On SixGe1−x Bulk Alloys
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- 15 February 2011, 381
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Growth Induced Alignment Of The First Neighbor Shell Of CAs In AlxGa1−xAs
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- 15 February 2011, 387
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Residual Impurities And Transport Properties of High Purity Movpe Gaas
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- 15 February 2011, 399
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An Anomalous Deep Center (EC-0.31 Ev) in Semi-Insulating GaAs
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- 15 February 2011, 405
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EL2-Induced Upconversion Luminescence In GaAs
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- 15 February 2011, 411
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Relationship Between Hydrogen-Related Metastable Defect And EL2-Level In GaAs Crystals
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- 15 February 2011, 417
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