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X-Ray Diffraction Study of Heteroepitaxy of MOCVD Grown TiO2 and VO2 Films on Sapphire Single Crystals†

Published online by Cambridge University Press:  25 February 2011

Hoydoo You ,
H.L.M. Chang ,
R.P. Chiarello  and
D.J. Lam
Hoydoo You
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
H.L.M. Chang
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
R.P. Chiarello
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
D.J. Lam
Affiliation:
Material Science Division Argonne National Laboratory, 9700 S. Cass Ave, Argonne, IL 60439
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Abstract

A four-circle diffractometry technique is used to determine the heteroepitaxial relations of VO2 and TiO2 thin films grown by an MOCVD technique on sapphire (0001) and (1120) surfaces. The use of a reflective geometry eliminates special sample preparation of the sample for the x-ray diffraction measurements. The distribution of epitaxial domains is found to depend strongly on the symmetry of the underlying substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 181
Copyright
Copyright © Materials Research Society 1991

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Footnotes

†

Work performed under DOE contract W-31-109-Eng-38

References

REFERENCES

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