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A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

Published online by Cambridge University Press:  15 March 2011

Margarita P. Thompson ,
Gregory W. Auner ,
Changhe Huang  and
James N. Hilfiker
Margarita P. Thompson
Affiliation:
ChE&MSE Dept., Wayne State University, Detroit, MI 48202
Gregory W. Auner
Affiliation:
ECE Dept., Wayne State University, Detroit, MI 48202
Changhe Huang
Affiliation:
ECE Dept., Wayne State University, Detroit, MI 48202
James N. Hilfiker
Affiliation:
J. A. Woollam Co., Inc., Lincoln, NE 68508
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Abstract

AlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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