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Structural Study of SIC/AIN Bilayers and Trilayers on SI and 6H-SIC

Published online by Cambridge University Press:  21 February 2011

D. Prasad Beesabathina ,
K. Fekade ,
K. Wongchotigul ,
M. G. Spencer  and
L. Salamanca-Riba
D. Prasad Beesabathina
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742.
K. Fekade
Affiliation:
MSRCE, School of Engineering, Howard University, Washington DC 20059.
K. Wongchotigul
Affiliation:
MSRCE, School of Engineering, Howard University, Washington DC 20059.
M. G. Spencer
Affiliation:
MSRCE, School of Engineering, Howard University, Washington DC 20059.
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742.
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Abstract

The growth morphology and microstructure of SiC/AlN/6H-SiC, SiC/AlN/SiC/Si, and SiC/AlN/Si heterostructures grown by LPCVD were studied using transmission electron microscopy. The SiC/AIN bilayers grown on 6H-SiC substrates were single crystalline and comprised of 3C-SiC and 2H-AlN. The epitaxial relationship between 2H-AlN and 6H-SiC is [0001]AlN//[0001]SiC. The SiC/AlN/SiC trilayers and the SiC/AIN bilayer grown on (001)Si were composed of 3H-SiC and 2H-AlN. However, the 2H-AlN layer was polycrystalline even though the (001)3C-SiC was single crystalline. The preferred orientation of the AlN layers in SiC/AlN/SiC/Si and SiC/AlN/Si are [0112] and [0002], respectively. The AlN/3C-SiC interface is relatively sharp compared to the AIN/Si interface in which an amorphous layer close to the interface was observed. In general, the polycrystalline AlN structure has two distinct layers: (1) nucleation layer and (2) bulk layer. High resolution lattice images of the polycrystalline AlN showed amorphous areas and small misoriented crystallites in the nucleation layer. The bulk layer consists of preferentially oriented large columnar grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 363
Copyright
Copyright © Materials Research Society 1994

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References

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