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Physical Properties of P and B Doped Microcrystalline Si:H Deposited by PECVD

Published online by Cambridge University Press:  01 January 1993

A. Rubino ,
M.L. Addonizio ,
G. Conte ,
G. Nobile ,
E. Terzini  and
A. Madan
A. Rubino
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy
M.L. Addonizio
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy
G. Conte
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy
G. Nobile
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy
E. Terzini
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy
A. Madan
Affiliation:
ENEA - Centro Ricerche Fotovoltaiche, P.O.box 32, 80055 Portici (Napoli) Italy MVSystems, Inc., 327 Lamb Lane Golden, CO 80401, USA
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Abstract

Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. We report conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 °C. The conductivity as well as the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor (σo) as well as the conductivity (σ) itself as a function of the activation energy (Ea) show a slope inversion for both n and p materials at an activation energy or about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 509
Copyright
Copyright © Materials Research Society 1993

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References

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