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Organically Hybridized In2O3 Thin Film Gas Sensors

Published online by Cambridge University Press:  01 February 2011

Ichiro Matsubara ,
Norimitsu Murayama ,
Woosuck Shin  and
Noriya Izu
Ichiro Matsubara
Affiliation:
National Institute of Advanced Industrial Science and Technology, Shimo-Shidami, Moriyama-ku, Nagoya 463–8560, Japan
Norimitsu Murayama
Affiliation:
National Institute of Advanced Industrial Science and Technology, Shimo-Shidami, Moriyama-ku, Nagoya 463–8560, Japan
Woosuck Shin
Affiliation:
National Institute of Advanced Industrial Science and Technology, Shimo-Shidami, Moriyama-ku, Nagoya 463–8560, Japan
Noriya Izu
Affiliation:
National Institute of Advanced Industrial Science and Technology, Shimo-Shidami, Moriyama-ku, Nagoya 463–8560, Japan
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Abstract

Organically hybridized In2O3 thin films have been prepared. The surface of In2O3 thin films was hybridized by organic components with various kinds of functional groups. Upon exposure to CO gas, the electrical resistance of the hybrid sensor with amino group in the organic components increased (R-increasing response), whereas H2 gas caused the decreasing in the sensor resistance. No response was obtained to CH4 gas. For the n-type metal oxide semiconductors, the R-increasing response cannot be explained by the ordinary combustion mechanism. The response of R-increasing or R-decreasing to CO was controlled by functional groups of organic components as in the case of SnO2-based hybrid thin films. The approach of organic-inorganic hybridization is effective to realize the selective detection of reducing gas molecules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A1.2
Copyright
Copyright © Materials Research Society 2005

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References

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