Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-23T15:03:23.573Z Has data issue: false hasContentIssue false
  • English
  • Français

Organic Thin Film Transiators on Synthesis Paper

Published online by Cambridge University Press:  26 February 2011

Hua-Chi Cheng ,
Yu-Rung Peng ,
Chao-An Chung ,
Wei-Hsin Hou  and
Zing-Way Pei
Hua-Chi Cheng
Affiliation:
[email protected], Industrial Technology Research Institute, EOL, R1024, Bldg. 51,195,SEc.4, Chungshin Rd, chutung, Hsinchu county, 310, Taiwan, 886-3-5917731, 886-3-5820093
Yu-Rung Peng
Affiliation:
[email protected], Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Chao-An Chung
Affiliation:
[email protected], Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Wei-Hsin Hou
Affiliation:
[email protected], Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Zing-Way Pei
Affiliation:
Zing-Way [email protected], Industrial Technology Research Institute, EOL, Hsinchu county, 310, Taiwan
Get access

Abstract

We have demonstrated organic thin-film transistor devices on synthesis paper of polypropylene (PP). All the fabrications are in solution-based processes except electrodes. As a barrier and smoother layer, photosensitive epoxy, 5μm-thich was coated on the paper substrate by using slit die coating. Polyvinyl phenol (PVP) was mixed with poly (melamine-co-formaldehyde) methylated, filmed by spin coating and ultraviolet (UV) cross linked to provide the gate dielectric layer. Using poly (3-hexylthiophene) as an active layer, a high-performance organic transistor with field effect mobility up to 0.006 cm2/ V s and an on/off ratio of 50 can be achieved. For the applications in flexible and disposable electronics, to built organic transistors on a cheap synthesis paper substrate can extremely lower the cost.

Keywords

organicthin filmdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S06-16
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Brown, A. R., Pomp, A., Hart, C. M., and Leeuw, D. M. de, Science 270, 972 (1995).Google Scholar
2. Klauk, H., Gundlach, D. J., and Jackson, T. N., IEEE Electron Device Lett. 20, 289 (1999).Google Scholar
3. Drury, C. J., Mutsaers, C. M. J., Hart, C. M., Matters, M., and de Leeuw, D. M., Appl. Phys. Lett. 73, 108 (1998).Google Scholar
4. Eder, F, Klauk, H, Halik, M, Zschieschang, U, Schmid, G, and Dehm, C, Appl Phys Lett 84, 2673 (2004).Google Scholar
5. Lee, C J, Moon, D G, and Han, J I, SID Symposium Digest Tech Papers 35, 1005 (2004).Google Scholar
6. Byun, Hyun Sook, Xu, Yong- Xian, Song, Chung Kun, Thin Solid Films 493, 278 (2005).Google Scholar
7. Klauk, H., Gundlach, D.J., Nichols, J.A., Sheraw, C.D., Bonse, M., Jackson, T.N., Solid State Technol. 43 (3), 63 (2000)Google Scholar