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Optically-Induced, Room-Temperature Oxidation of Gallium Arsenide

Published online by Cambridge University Press:  28 February 2011

Chien-Fan Yu ,
Michael T. Schmidt ,
Dragan V. Podlesnik  and
Richard M. Osgood Jr.
Chien-Fan Yu
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Michael T. Schmidt
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Dragan V. Podlesnik
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
Richard M. Osgood Jr.
Affiliation:
Microelectronics Sciences Laboratories, Columbia University, New York, NY 10027
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Abstract

Room-temperature, optically-induced oxidation of the gallium arsenide surface has been studied with laser radiation of different wavelengths. It was found that deep-ultraviolet light is much more effective in enhancing oxidation than near-ultraviolet or visible light. The growth rate of the oxide was also found to be drastically increased by the presence of chemisorbed water molecules on the surface.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 251
Copyright
Copyright © Materials Research Society 1987

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