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Optical and structural prorerties of InAs epilayer on graded InGaAs

Published online by Cambridge University Press:  17 March 2011

Gu Hyun Kim ,
Jung Bum Choi ,
Joo In Lee ,
Se-Kyung Kang ,
Seung Il Ban ,
Jin Soo Kim ,
Jong Su Kim ,
Sang Heon Lee  and
Jae-Young Leem
Gu Hyun Kim
Affiliation:
Dept of Physics, Chungbuk National Univ, Chungju, Korea
Jung Bum Choi
Affiliation:
Dept of Physics, Chungbuk National Univ, Chungju, Korea
Joo In Lee
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards and Science (KRISS), Taejon, Korea
Se-Kyung Kang
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards and Science (KRISS), Taejon, Korea
Seung Il Ban
Affiliation:
Materials Evaluation Center, Korea Research Institute of Standards and Science (KRISS), Taejon, Korea
Jin Soo Kim
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology (KJIST), Kwangju, Korea
Jong Su Kim
Affiliation:
Department of physics, Yeungnam University, Kyongsan, Korea
Sang Heon Lee
Affiliation:
School of Electronic and Electrical Engineering, Kyungpook National University Taegu, Korea
Jae-Young Leem*
Affiliation:
Dept. of Optical Engineering, Inje University, Kimhae, Korea
*
Corresponding Author: [email protected]
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Abstract

We have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N3.10
Copyright
Copyright © Materials Research Society 2002

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