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The Mechanical Properties of Common Interlevel Dielectric Films and Their Influences on Aluminum Interconnect Extrusions

Published online by Cambridge University Press:  10 February 2011

Fen Chen ,
Baozhen Li ,
Timothy D. Sullivan ,
Clara L. Gonzalez ,
Christopher D. Muzzy ,
H. K. Lee ,
Mark D. Levy ,
Michael W. Dashicll  and
James Kolodzcy
Fen Chen
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Baozhen Li
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Timothy D. Sullivan
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Clara L. Gonzalez
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Christopher D. Muzzy
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
H. K. Lee
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Mark D. Levy
Affiliation:
IBM Microelectronics Division, 1000 River St., Essex Junction, VT
Michael W. Dashicll
Affiliation:
Electrical and Computer Engineering, University of Delaware, Newark, DE.
James Kolodzcy
Affiliation:
Electrical and Computer Engineering, University of Delaware, Newark, DE.
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Abstract

Knowledge of the mechanical properties of interlevel dielectric films and their impact on sub-micron interconnect reliability is becoming more and more important as critical dimensions in ULSI circuits are scaled down. For example, lateral aluminum (Al) extrusions into spaces between metal lines, which become a more of a concern as the pitches shrink, appear to depend partially on properties of SiO2 underlayers. In this paper, the mechanical properties of several common interlevel dielectric SiO2 films such as undoped silica glass using a silane (SiH4) precursor, undoped silica glass using a tetraethylorthosilicate (TEOS) precursor, phosphosilicate glass (PSG) deposited by plasma-enhanced chemical vapor deposition (PECVD) and borophosphosilicate glass (BPSG) deposited by sub-atmosphere chemical vapor deposition (SACVD) were studied. Among the four common interlevel layers, BPSG exhibits the smallest modulus (E), hardness (H) and the highest the coefficients of thermal expansion (CTE). BPSG again has the lowest as-deposited compressive stress and the lowest local Si-O-Si strain before annealing. Stress interactions between the various SiO2 underlayers and the Al metal film are further investigated. The impact of dielectric elastic properties on interconnect reliability during thermal cycles is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 421
Copyright
Copyright © Materials Research Society 2000

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References

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