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Excitation Intensity Dependence of Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  10 February 2011

Baojie Yan  and
P. C. Taylor
Baojie Yan
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

Light-induced electron spin resonance in a-Si:H films was measured using second harmonic detection over a wide range of excitation intensities. Second harmonic detection results in an undifferentiated absorption lineshape that saturates much less easily with increasing microwave power. The ratio of the spin densities of the broad line to the narrow line is approximately 3 at a generation rate of 1019 cm−3s−1, and this ratio increases only slightly with decreasing excitation intensity. The kinetics of the LESR after the light is turned on or off show dispersive behavior. The dispersive response of the LESR is related to the dispersive transport of carriers at low temperature. A model that assumes a bimolecular recombination fits the experimental results reasonably well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 805
Copyright
Copyright © Materials Research Society 1998

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References

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