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Analysis of VHF Glow Discharge of A-SI:H Over a Wide Frequency Range

Published online by Cambridge University Press:  21 February 2011

Ralf Zedlitz ,
Moritz Heintze  and
Gottfried H. Bauer
Ralf Zedlitz
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Germany
Moritz Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Germany
Gottfried H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, Germany
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Abstract

a-Si: H was deposited in a VHF-plasma in a wide frequency range up to 250MHz. The deposition rate was found to increase with excitation frequency up to 180MHz, where values of 35Å are achieved maintaining good film properties

The onset of this increase occurs near 60MHz, when the excitation frequency exceeds the inelastic electron-neutral collision rate. From optical emission of hydrogen and a He/Ar line pair the high energy tail of EEDF was probed. It is found, that the rise in deposition rate is solely due to the increased plasma density and not to an enhancement of the high energy tail of the EEDF, as postulated previously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 147
Copyright
Copyright © Materials Research Society 1992

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References

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