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Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

Published online by Cambridge University Press:  15 February 2011

H. L. Hsiao ,
K. C. Wang ,
L. W. Cheng ,
A. B. Yang ,
T. R. Yew  and
H. L. Hwang
H. L. Hsiao
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu
K. C. Wang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu
L. W. Cheng
Affiliation:
Materials Science Center, National Tsing Hua University, Hsinchu
A. B. Yang
Affiliation:
Department of Physics, Tung Hal University, Taichung, Taiwan, R.O.C.
T. R. Yew
Affiliation:
Materials Science Center, National Tsing Hua University, Hsinchu
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu
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Abstract

The polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 195
Copyright
Copyright © Materials Research Society 1996

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