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X-Ray Scattering Studies of Interfacial Microstructures in Inx, Ga1−x As/GaAs Superlattices

Published online by Cambridge University Press:  15 February 2011

Z. H. Ming ,
Y. L. Soo ,
S. Huang ,
Y. H. Kao ,
K. Stair ,
G. Devane  and
C. Choi-Feng
Z. H. Ming
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
Y. L. Soo
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
S. Huang
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
Y. H. Kao
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
K. Stair
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
G. Devane
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
C. Choi-Feng
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
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Abstract

Interfacial microstructures in 100-period InxGa1−xAs(15Å)/GaAs(100Å) superlattices grown on GaAs (100) substrates by molecular beam epitaxy were studied by using large angle x-ray scattering techniques. Unusual satellite peaks in the lateral direction parallel to the sample surface were observed in a sample with x = 0.535 grown at 480°C, indicating an in-plane structural ordering. This result is confirmed by high resolution transmission electron microscopy observations that thickness modulation in the InxGa1−xAs layers gives rise to long-range lateral periodic arrays of cluster-like microstructures with spacing on the order of a few hundred Ångstroms. This thickness modulation is found to occur only in [110] direction, thus the material can be viewed as a somewhat disordered array of grown-in parallel quantum wires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 171
Copyright
Copyright © Materials Research Society 1995

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