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Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

Published online by Cambridge University Press:  15 February 2011

Nobuyoshi Koshida  and
Hideki Koyama
Nobuyoshi Koshida
Affiliation:
Tokyo University of Agriculture and Technology, Faculty of Technology, Division of Electronic and Information Engineering, Koganei, Tokyo 184, Japan
Hideki Koyama
Affiliation:
Tokyo University of Agriculture and Technology, Faculty of Technology, Division of Electronic and Information Engineering, Koganei, Tokyo 184, Japan
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Abstract

The optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 219
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Koshida, N. and Koyama, H., Jpn. J. Appl. Phys. 30, L1221 (1991).Google Scholar
3. Bsiesy, A., Vial, J. C., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R., Wasiela, A., Halimaoui, A., and Bomchil, G., Surf. Scd. 254, 195 (1991).Google Scholar
4. Gardelis, S., Rimmer, J. S., Dawson, P., Hamilton, B., Kubiak, R. A., Whall, T. E., and Parker, E. H. C., Appl. Phys. Lett. 59, 2118 (1991).CrossRefGoogle Scholar
5. Koyama, H. and Koshida, N., Ext. Abst. Int'l. Conf. Solid State Devices and Materials, Yokohama, 1991 (Business Center for Academic Societies Jpn., Tokyo, 1991) pp. 314–316.Google Scholar
6. Koyama, H., Araki, M., Yamamoto, Y., and Koshida, N., Jpn. J. Appl. Phys. 30 (1991) Dec. (in press).Google Scholar
7. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60 (1992) Jan. (in press).Google Scholar
8. Koshida, N., Nagasu, M., Sakusabe, T., and Kiuchi, Y., J. Electrochem. Soc. 132, 346 (1985).CrossRefGoogle Scholar
9. Koshida, N., Koyama, H., and Kiuchi, Y., Jpn. J. Appl. Phys. 25, 1069 (1986).CrossRefGoogle Scholar
10. Koshida, N., Nagasu, M., Echizenya, K., and Kiuchi, Y., J. Electrochem. Soc. 133, 2283 (1986).Google Scholar
11. Koyama, H. and Koshida, N., J. Electrochem. Soc. 138, 254 (1991).CrossRefGoogle Scholar
12. Koshida, N. and Echizenya, K., J. Electrochem. Soc. 138, 837 (1991).Google Scholar
13. Yoshimura, S. and Koshida, N., Ext. Abst. of the Meetings of the Japan. Soc. of Appl. Phys., Fukuoka, Sep., 1989; Asaka, Mar., 1990; Morioka, Sep., 1990.Google Scholar
14. Koshida, N., Kiuchi, Y., and Yoshimura, S., Proc. 10th Symp. Photoelectron. Image Devices, London, 1991 (IOP Pub., Bristol, 1992) (in press).Google Scholar