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Thickness-Dependent Micro-Raman Measurement of Poly-Si Films Prepared by Metal-Induced-Crystallization using a Ni Layer

Published online by Cambridge University Press:  17 March 2011

Shin-ichi Muramatsu ,
Yasushi Minagawa ,
Fumihito Oka  and
Yoshiaki Yazawa
Shin-ichi Muramatsu
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Yasushi Minagawa
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Fumihito Oka
Affiliation:
Advanced Research Center, Hitachi Cable, Ltd., Tsuchiura-shi, Ibaraki 300-0026, Japan
Yoshiaki Yazawa
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi, Tokyo 185-8601, Japan
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Abstract

Relatively thick amorphous silicon films for solar-cell applications were prepared by metal-induced-crystallization (MIC). Then, the thickness-dependent characteristics of micro-Raman spectra from a cross section of the prepared polycrystalline silicon (poly-Si) films were analyzed. It was found that Ni-induced crystallized films have a uniform composition that is 80% polycrystalline and 20% nanocrystalline. Also, the x-ray diffraction data show that a sub-mono-layer of Ni is sufficient for MIC of 6-μm-thick amorphous silicon (a-Si) films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A9.6
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

(1)Werner, J. H. and Bergmann, R. B., Technical Digest of the International PVSEC-11, p.923, (Sapporo, 1999).Google Scholar
(2)Yamamoto, K., Nakajima, A., Suzuki, T., Yoshimi, M., Nishio, H. and Izumina, M., Proceedings of 1st. WCPEC, p. 1575 (Hawaii, 1994).Google Scholar
(3)Shah, A. V., Platz, R. and Keppner, H., Solar Energy Materials and Solar Cells, 38 (1995) 501.Google Scholar
(4)Cammarata, R. C., Thompson, C. V., Hayzelden, C. and Tu, K. N., J. Mater. Res., 5 (1990) 2133.Google Scholar
(5)Nast, O., Puzzer, T., Koschier, L. M., Sproul, A. B. and Wenham, S. R., Appl. Phys. Lett., 73, 3214(1998).Google Scholar
(6)Lam, Lawrence K., Chen, Szu-ke, and Ast, G., Appl. Phys. Lett., 74, 1866(1999)Google Scholar
(7)Taira, S., Tsukiji, M., Matsui, T., Toyama, T. and Okamoto, H., Technical Digest of the International PVSEC-11, p.189, (Sapporo, 1999).Google Scholar