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Thermoelectric Properties of SiO2/SiO2+CoSb3Multi Nanolayered Films Modified by Me v Si ions Bombardment

Published online by Cambridge University Press:  01 February 2011

S. Budak ,
Cydale Smith ,
John Chacha ,
Marcus Pugh ,
Kudus Ogbara ,
Kaveh Heidary ,
R. B. Johnson ,
Claudiu Muntele  and
D. ILA
S. Budak*
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Cydale Smith
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
John Chacha
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Marcus Pugh
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Kudus Ogbara
Affiliation:
[email protected], Alabama A&M University, Physics, Normal, Alabama, United States
Kaveh Heidary
Affiliation:
[email protected], Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
R. B. Johnson
Affiliation:
[email protected], Alabama A&M University, Physics, Normal, Alabama, United States
Claudiu Muntele
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
D. ILA
Affiliation:
[email protected], Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
*
*Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: [email protected]
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Abstract

The performance of the thermoelectric devices and materials is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ or decreasing K. We have prepared 100 alternating nanolayered films of SiO2/SiO2+CoSb3 using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the nanolayered superlattice films at the three different fluences to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. We have characterized 100 alternating nanolayered films of SiO2/SiO2+CoSb3 before and after Si ion bombardments as we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for three different fluences.

Keywords

thermoelectricitynanostructureion-beam processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD05-13
Copyright
Copyright © Materials Research Society 2010

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