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Study on ZrO2 Deposited Directly on Si as an Alternative Gate Dielectric Material

Published online by Cambridge University Press:  10 February 2011

Wen-Jie Qi ,
Renee Nieh ,
Byoung Hun Lee ,
Youngjoo Jeon ,
Laegu Kang ,
Katsunori Onishi  and
Jack C. Lee
Wen-Jie Qi
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Renee Nieh
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Byoung Hun Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Youngjoo Jeon
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Laegu Kang
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Katsunori Onishi
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758
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Abstract

Reactive-magnetron-sputtered ZrO2 thin film has been deposited on Si directly for gate dielectric application. Both structural and electrical properties of the ZrO2 film have been investigated. An amorphous structure for 30Å ZrO2 and a semi-amorphous structure for 200Å ZrO2 have been revealed. The sputtered film shows a good stoichiometry and a good structural stability of ZrO2 based on the X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy data. Thin equivalent oxide thickness of about 11.5Å was obtained without the consideration of quantum mechanical effects. A low leakage of less than 10−2 A/cm2 at ±1V relative to the flat band voltage was obtained for this 11.5Å equivalent oxide thickness Pt/ZrO2/Si structure. High effective dielectric breakdown and superior reliability properties have been demonstrated for ZrO2 gate dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 263
Copyright
Copyright © Materials Research Society 2000

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