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Simple Plan View Specimen Preparation Technique For Tem Investigation Of Semiconductors and Metals

Published online by Cambridge University Press:  21 February 2011

A. De Veirman ,
J. Eysermans ,
H. Bender ,
J. Vanhellemont  and
J. Van Landuyt
A. De Veirman
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
J. Eysermans
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
J. Van Landuyt
Affiliation:
Universiteit Antwerpen, RUCA, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium.
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Abstract

This paper discusses a rapid and simple specimen preparation technique which was originally developed for plan view TEM investigation of processed silicon, but which afterwards was modified for the study of GaAs, Al/Al2O3 and Silicon-On-Insulator (SOI) structures. The major advantage of this poor man's method is that no specialised nor expensive equipment is needed.

A second technique is also described which is used in the case of unseeded SOI structures where the analysis of the top silicon layer is important.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 241
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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