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Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

E. Bauser ,
D. KÄss ,
M. Warth  and
H. P. Strunk
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG
D. KÄss
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, D-7000 Stuttgart 80, FRG
M. Warth
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80, FRG now at: Robert Bosch GmbH, D-7410 Reutlingen, FRG
H. P. Strunk
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, D-7000 Stuttgart 80, FRG now at: Technische Universität Hamburg-Harburg, D-2100 Hamburg 90, FRG
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Abstract

Single-crystal silicon layers and doping multilayers have been grown by liquid phase qpitaxy on silicon substrates. The substrates were either partially masked by SiO2, with via holes of various shapes and sizes, or patterned with SiO2 stripes, or profiled with grooves and ridges. The via holes and grooves were just refilled, or they acted as seeding areas for lateral overgrowth of the oxidized wafer up to 100μm. The silicon layers, interfaces and heterointerfaces were free of defects. With appropriate growth conditions the surfaces and interfaces of the epitaxial Si were outstandingly planar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 267
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

/1/ Bauser, E. and Strunk, H., “Silicon Liquid Phase Epitaxy”, Raport Nr. BMFT-FB-T 83–097, Fachinformationszentrum Karlsruhe, 1983 Google Scholar
/2/ Käb, D., Warth, M., Strunk, H.P., Bauser, E., Physica 129 B, 161 (1985)Google Scholar
/3/ Appel, W., Bauser, E., Bender, H., Käe, D., Strunk, H.P., Vogel, G., Eurcphysics Conference Abstracts, “ESSDERC ‘85” Vol. 9H, Methfessel, S. Ed., 1985 pg. 172 Google Scholar
/4/ Leamy, H.J. and Doherty, C.J., Appl. Phys. Lett. 37, 11 (1980)Google Scholar
/5/ Jastrzebski, L., Corboy, J.F., Mc Ginn, J.T., and Pagliaro, R. Jr, J. Electrochem. Soc. 130, 1571 (1983)Google Scholar
/6/ Bean, J.C. and Rozgonyi, G.A., Appl. Phys. Lett. 41, 752 (1982)Google Scholar
/7/ Linnebach, R. and Bauser, E., J. of Crystal Growth 57, 43 (1982)Google Scholar
/8/ Schweitzer, G., Traxler, A., Bleuler, H., Bauser, E. and Koroknay, P., Vakuum-Technik 32, 70 (1983)Google Scholar
/9/ Bauser, E. and Strunk, H.P., Mat. Res. Soc. Synp. Proc. 37, 109 (1985)Google Scholar
/10/ Fan, J.C.C., Tsarev, B.Y. and Geis, M.W., J. of Crystal Growth 63, 453 (1983)Google Scholar
/11/ Celler, G.K., Leamy, H.J., Solid State and Materials Sciences 12, 193 (1985)Google Scholar