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Recent Advances in The Application of Focused Ion Beams

Published online by Cambridge University Press:  25 February 2011

Kenji Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Susumu Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

[1] Seliger, R. L., Ward, J. W., Wang, V. and Kubena, R. L., Appl. Phys. Lett. 34 (1979) 310.Google Scholar
[2] Kubena, R. L., Anderson, C. L., Seliger, R. L., Jullens, R. A. and Stevens, E. H., J. Vac. Sci. Technol. 19 (1981) 916.Google Scholar
[3] Miyauchi, E. and Hashimoto, H., Nucl. Inst. Methods (to be published).Google Scholar
[4] Gamo, K. and Namba, S., Proc. Microcircuit Eng. 84 (to be published).Google Scholar
[5] Tamura, M., Shukuri, S., Tachi, S., Ishitani, T. and Tamura, H., Jpn. J. Appl. Phys. 23 (1984) L417.CrossRefGoogle Scholar
[6] Kubena, R. L., Lee, J. Y., Jullens, R. A., Brault, R. G., Middleton, P. L. and Stevens, E. H., IEEE Trans. Electron Devices ED–31 (1984) 1186.CrossRefGoogle Scholar
[7] Miyauchi, E., Arimoto, H., Hashimoto, H. and Utsumi, T., J. Vac. Technol. B1 (1983).Google Scholar
[8] Shukuri, S., Wada, Y., Masuda, H., Ishitani, T. and Tamura, M., Jpn. J. Appl. Phys. 23 (1984) L543.Google Scholar
[9] Reuss, R. H., Morgan, D., Greeneich, E. W., Clark, W. M. Jr and Rensch, D. B., J. Vac. Sci. Technol. B3 (1985) 62.Google Scholar
[10] Takamori, A., Miyauchi, E., Arimoto, H., Bamba, Y. and Hashimoto, H., Jpn. J. Appl. Phys. 223 (1984) L599.Google Scholar
[11] Brown, W. L. and Wagner, A., Proc. Intern. Ion Eng. Cong. ISIAT'83&IPAT'83 (Kyoto, 1983) 1738A.Google Scholar
[12] Heard, R. J., Cleaver, J. R. A. and Ahmed, H., J. Vac. Sci. Technol. B3 (1985) 87.CrossRefGoogle Scholar
[13] Gamo, K., Ochiai, Y. and Namba, S., Jpn. J. Appl. Phys. 21 (1982) L792.CrossRefGoogle Scholar
[14] Gamo, K., Takakura, N., Samoto, N., Shimizu, R. and Namba, S., Jpn. J. Appl. Phys. 23 (1984) L293.CrossRefGoogle Scholar
[15] Gamo, K., Takakura, N., Takehara, D. and Namba, S., Extended Abstracts of 16th Intern. Conf. Solid State Devices and Materials (Jpn. Soc. Appl. Phys. 1984) 31.Google Scholar
[16] Johnson, W.A., North, J.C. and Wolfe, R., J. Appl. Phys. 44 (1973) 4753.Google Scholar
[17] Moriwaki, K., Aritome, H. and Namba, S., Jpn.J.Appl.Phys. 20(1981) 1305.Google Scholar
[18] Komuro, M., Hiroshima, H., Tanoue, H. and Kanayama, T., J. Vac. Sci. Technol. B1 (1983) 985.Google Scholar
[19] Efremow, N. N., Geis, M. W., Flanders, D. C., Lincoln, G. A. and Economou, N. P., J. Vac. Sci. Technol. B3 (1985) 416.Google Scholar
[20] Gamo, K., Moriizumi, K., Ochiai, Y., Takai, M., Namba, S., Shiokawa, T. and Minamisono, T., Jpn. J. Appl. Phys. 23 (1984) L642.Google Scholar
[21] Venkatesan, T., Taylor, G. N., Wagner, A., Wilkens, B. and Barr, D., J. Vac. Sci. Technol. 19 (1981) 1379.Google Scholar
[22] Venkatesan, T., Wolf, T., Allara, D., Wilkens, B. J. and Taylor, G. N., App1. Pjys. Lett. 43 (1983) 934.Google Scholar
[23] Eskildsen, S. S. and Sorensen, G., Nucl. Inst. Methods (to be Published).Google Scholar
[24] Kanayama, T., Komuro, M., Hiroshima, H., Ohira, T., Atoda, N., Tanoue, H. and Tsurushima, T., Extended Abstracts 16th Intern. Conf. Solid State Devices and Materials (Jpn. Soc. Appl. Phys. 1984) 27.Google Scholar
[25] Gamo, K., Matsui, T. and Namba, S., Jpn. J. Appl. Phys. 22 (1983) L692.Google Scholar
[26] Miyauchi, E., Hashimoto, H. and Utsumi, T., Jpn. J. Appl. Phys. 22 (1983) L225.Google Scholar
[27] Gamo, K., Ukegawa, T., Inomoto, Y., Ochiai, Y. and Namba, S., J. Vac. Sci. Technol. 19 (1981) 1182.Google Scholar
[28] Ishitani, T., Umemura, K. and Tamura, H., Nucl. Inst. Methods 218 (1983) 363.Google Scholar
[29] Arimoto, H., Takamori, A., Miyauchi, E. and Hashimoto, H., Jpn. J. Appl. Phys. 23 (1984) L165.Google Scholar
[30] Bell, A. and Scwind, G. A. and Swanson, L. W., J. Appl. Phys. 53 (1982) 4602.Google Scholar
[31] Torii, Y. and Yamada, H., Jpn. J. Appl. Phys. 22 (1983) L444.Google Scholar
[32] Okutani, T., Fukuda, M., Noda, T., Tamura, H., Watanabe, H. and Shepherd, C., J. Vac. Sci. Technol. B1 (1983) 1145.Google Scholar
[33] Swanson, L. W., Schwind, G. A. and Bell, A. E., J. Appl. Phys. 51 (1980) 3453.Google Scholar
[34] Gamo, K., Inomoto, Y., Ochiai, Y. and Namba, S., Proc. Microcircuit Eng. Conf. '81 (Lausanne, 1981) 359.Google Scholar
[35] Seliger, R. L., Kubena, R. L. and Wang, V., Jpn. J. Appl. Phys. 21 (1982) Suppl. 21-1, 3.Google Scholar
[361 Shiokawa, T., Toyoda, K., Kim, P. H., Namba, S., Aihara, R. and Gamo, K., Proc. Microcircuit Eng. '84 (Berlin, 1984) (to be published).Google Scholar
[37] Anazawa, N., Aihara, R., Ban, E. and Okunuki, M., Proc. SPIE 393, ed. Blais, P. D. (1983) 137.Google Scholar
[39] Bamba, Y., Miyauchi, E., Arimoto, H., Kuramoto, K., Takamori, A. and Hashimoto, H., Jpn. J. Appl. Phys. 22 (1983) L650.Google Scholar
[40] Ochiai, Y., Gamo, K. and Namba, S., Jpn. J. Appl. Phys. 23 (1984) L400.Google Scholar
[41] Ochiai, Y., Gamo, K. and Namba, S., J. Vac. Sci. Technol. B3 (1985) 67.Google Scholar
[42] Ochiai, Y., Gamo, K. and Namba, S., Jpn. J. Appl. Phys. 24 (1985)Google Scholar
[43] Scwarts, G. C. and Schaible, P. M., J. Vac. Sci. Technol. 16 (1979) 410.Google Scholar
[44] Ochiai, Y., Gamo, K. and Namba, S., 1985 Intern. Symp. on Electron, Ion and Photon beams.Google Scholar
[45] Yamaguchi, H., Shimase, A., Haraichi, S. and Miyauchi, T., J. Vac. Sci. Technol. B3 (1985) 71.Google Scholar
[46] Morimoto, H., Sasaki, Y., Watakabe, Y. and Kato, T., J. Appl. Phys. 57 (1985) 159.Google Scholar
[47] Moller, W., Pfeiffer, Th. and Schluckebier, M., Nucl. Inst. methods 181/182 (1981) 297.Google Scholar
[48] Boring, J. W., Johnson, R. E., Reimann, C. T. and Garret, J. W., Brown, W. L. and Marcantonio, K. J., Nucl. Inst. Methods 218 (1983) 707.CrossRefGoogle Scholar