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Raman scattering spectra in C-implanted GaN epilayers

Published online by Cambridge University Press:  21 March 2011

W. H. Sun ,
S. J. Chua ,
J. Zhang ,
L. S. Wang ,
M. S. Hao ,
K. M. Chen  and
G.G. Qin
W. H. Sun
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
S. J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
J. Zhang
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
L. S. Wang
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
M. S. Hao
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602
K. M. Chen
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
G.G. Qin
Affiliation:
Department of Physics, Peking University, Beijing 100871, China
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Abstract

We have investigated the Raman scattering spectra in C-implanted GaN epilayers. (a) In as-implanted GaN, new Raman bands at 293, 376, 669, 1027, 1094 and 1053 cm−1 appeared. From phonon-dispersion curves for hexagonal GaN, the 293 cm−1 and 669 cm−1 bands were tentatively assigned to the highest acoustic-phonon branch and the optical-phonon branch at the Brillouin zone boundaries, respectively; the 1027 and 1094 cm−1 peaks might be caused by two-phonon scattering involving the 376 and 669 cm−1 phonons, and the 376 cm−1and A1(LO) phonons respectively. (b) Two sharp bands at ∼1350 and ∼1600 cm−1 were observed in the Raman spectra of carbon- implanted GaN after post-implantation annealing treatments. The intensities of these two bands increased while their full widths at half maximum decreased with increasing annealing temperature. We assigned them, respectively, to the D and G bands of small graphite crystallites arising from C implantation and post-implantation annealing. The observation of these two bands indicates the formation of small graphite crystallites in C-implanted GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.8
Copyright
Copyright © Materials Research Society 2001

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References

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