Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T09:50:19.769Z Has data issue: false hasContentIssue false
  • English
  • Français

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Published online by Cambridge University Press:  10 February 2011

T. Hakata ,
H. Ohyama ,
E. Simoen ,
C. Claeys ,
Y. Takami ,
K. Kawamura ,
K. Miyahara  and
M. Hososhima
T. Hakata
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
H. Ohyama
Affiliation:
Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-11Japan
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Y. Takami
Affiliation:
Rikkyo University, 2-5-1 Nagasaka Yokosuka Kanagawa, 240-01Japan
K. Kawamura
Affiliation:
Nippon Steel Co., 3434 Shimada Hikari Yamaguchi, 734Japan
K. Miyahara
Affiliation:
Kumamoto University, 39-1 Kurokami Kumamoto, 860Japan
M. Hososhima
Affiliation:
Japan Electronic Materials Co., 2-5-13, Amagasaki, Hyogo, 660Japan
Get access

Abstract

Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 387
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Simoen, E, Magnusson, U. et al., proc. of Radiations and their Effects on Components and Systems, RADECS '93, 365 (1994).Google Scholar
2. Ohno, T., Izumi, K. et al., Electron. Lett., 23, 141 (1987).Google Scholar
3. Ohyama, H., Simoen, E., Claeys, C. et al., in Silicon-on-Insulator Technology and Devices VIII, eds. Cristoloveanu, S., Hemment, P.L., Izumi, K. and Wilson, S., Electrochem. Soc. Ser., Pennington, PV-97–23, 289 (1997).Google Scholar
4. Ohyama, H., Vanhellemont, J. et al., IEEE Trans. on Nucl. Sci., 43, 3019 (1996).Google Scholar
5. Ohyama, H., Vanhellemont, J. et al., Appl. Phys. Lett., 69, 2429 (1996).Google Scholar