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Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon

Published online by Cambridge University Press:  01 February 2011

Hui Li ,
Na Li ,
Subhash M. Joshi  and
Teh Y. Tan
Hui Li
Affiliation:
[email protected], Duke University, Mechanical Engineering and Materials Science, Durham NC 27708, United States
Na Li
Affiliation:
[email protected], Duke University, Mechanical Engineering and Materials Science, Durham, NC, 27708, United States
Subhash M. Joshi
Affiliation:
[email protected], Intel corporation, Hillsboro, OR, 97124, United States
Teh Y. Tan
Affiliation:
[email protected], Duke University, Mechanical Engineering and Materials Science, Durham, NC, 27708, United States
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Abstract

It is well known that Au indiffusion in Si is dominated by the Kick-Out mechanism governed by Si self-interstitials, with negligible contribution from the Frank-Turnbull mechanism governed by vacancies. In this paper we present modeling and simulation results to show that the Frank-Turnbull mechanism actually dominates Au outdiffusion in Si.

Keywords

diffusionAusimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F02-05
Copyright
Copyright © Materials Research Society 2007

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References

1. Gosele, U., Frank, W. and Seeger, A., Appl. Phys. 23, 361 (1980).Google Scholar
2. Frank, F. C. and Turnbull, D., Phys. Rev. 104, 617 (1956).Google Scholar
3. Hill, M., Lietz, M. and Sittig, R., J. Electrochem. Soc. 129, 1579 (1982).Google Scholar
4. Stolwijk, N. A., Schuster, B. and Holzl, J., Appl. Phys. A 33, 133 (1984).Google Scholar
5. Gdanitz, H. and Schmalz, K., Phys. Stat. Sol. A 117, 395 (1990).Google Scholar
6. Gafiteanu, R., Gosele, U. M. and Tan, T. Y., in Defect and Impurity Engineered Semiconductors and Devices, edited by Ashok, S., Chevalier, J., Akasaki, I., Johnson, N. M., and Sopori, B. L. (Materials Research Society, Pittsburgh, PA, 1995), MRS Proc. Vol. 378, p. 297.Google Scholar
7. Joshi, S. M., Gosele, U. M. and Tan, T. Y., in Semiconductor Process and Device Performance Modeling, edited by Dunham, S. T. and Nelson, J. S. (Materials Research Society), Pittsburgh, PA, (1998), MRS Proc. Vol. 490, p. 117.Google Scholar
8. Yu, S., Tan, T. Y. and Gosele, U. M., J. Appl. Phys. 70, 4827 (1991).Google Scholar