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Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)

Published online by Cambridge University Press:  10 February 2011

A. Kamath ,
B. Y. Kim ,
P. M. Blass ,
Y. M. Sun ,
J. M. White  and
D. L. Kwong
A. Kamath
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
B. Y. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
P. M. Blass
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry The University of Texas at Austin, Austin, TX 78712
Y. M. Sun
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry The University of Texas at Austin, Austin, TX 78712
J. M. White
Affiliation:
Center for Materials Chemistry, Department of Chemistry and Biochemistry The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, Austin, TX 78712
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Abstract

The oxidation resistance of ultrathin (5–15Å) thermally grown silicon nitride (Si3N4), in conditions relevant to the deposition/annealing of Tantalum Pentoxide (Ta2O5) in a Rapid Thermal Processing (RTP) environment, has been non destructively examined using X-Ray Photoelectron Spectroscopy (XPS). This has been carried out with a view to establishing a process window for the deposition of Ta2O5 on a Rapid Thermally Nitrided (RTN) Si(100) surface, with negligible oxidation of the Si(100) substrate. A physical model of the oxidation process of these films is also proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 341
Copyright
Copyright © Materials Research Society 1997

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References

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