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The Origin Of Light Emission From Porous Silicon

Published online by Cambridge University Press:  10 February 2011

M. Ben-Chorin ,
H. Heckler ,
D. Kovalev ,
B. Averboukh ,
G. Polisski ,
M. Schwartzkopff  and
F. Koch
M. Ben-Chorin
Affiliation:
Weizmann Institute of Science, Department of Chemical Physics, Rehovot 76100, Israel
H. Heckler
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
D. Kovalev
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
B. Averboukh
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
G. Polisski
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
M. Schwartzkopff
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
F. Koch
Affiliation:
Technische Universitiit Miinchen, Physik-Department E16, D-58747 Garching, Germany
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Abstract

We report on luminescence hole burning experiments, which prove that radiative recombination between quantum confined states is the only viable model for the mechanism of the light emission from porous silicon. We find that more than 90% of the luminescence originates from quantum confined states inside the Si nanocrystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 311
Copyright
Copyright © Materials Research Society 1998

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