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Mo—In—Mn Based Ohmic Contact to P—GaAs

Published online by Cambridge University Press:  25 February 2011

T.S. Kalkur ,
Y.C. Lu  and
Robert Caracciolo
T.S. Kalkur
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, CO 80907
Y.C. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854
Robert Caracciolo
Affiliation:
Center for Ceramic Research, Rutgers University, Piscataway, NJ 08854
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Abstract

Mo—In—Mn metallization is used to form ohmic contact on Be—implanted Rapid Thermally annealed GaAs. The rapid thermal alloying of Mo—In—Mn contact metallization is performed at various temperatures and times in A.G. Associates Heat Pulse 410 system in forming gas atmosphere. The electrical properties of the contacts were analyzed by current-voltage and contact resistivity measurements. The microstructures of the contacts were analyzed using scanning electron microscope, energy dispersive x-ray analysis, x-ray diffraction and secondary ion mass spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 437
Copyright
Copyright © Materials Research Society 1989

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References

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