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Modification of the Silicon Surface by Electroless Deposition of Platinum from HF Solutions

Published online by Cambridge University Press:  10 February 2011

P. Gorostiza ,
J. Servat ,
R. Diaz ,
F. Sanz  and
J. R. Morante
P. Gorostiza
Affiliation:
Departament de Química Física, Universitat de Barcelona
J. Servat
Affiliation:
Departament de Química Física, Universitat de Barcelona
R. Diaz
Affiliation:
Departament de Química Física, Universitat de Barcelona
F. Sanz*
Affiliation:
Departament de Química Física, Universitat de Barcelona
J. R. Morante
Affiliation:
Departament de Física Aplicada i Electrónica, Universitat de Barcelona Av Diagonal, 647. E-08028 Barcelona (Spain)
*
1 Corresponding Author, e-mail: [email protected]
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Abstract

Platinum electroless deposition on Si(lOO) from HF solutions is hindered on n+ substrates as compared to p-substrates defining an induction period and displaying a more local behavior. The results are discussed in terms of a global electrochemical process. Platinum reduces injecting holes to the silicon valence band and silicon atoms oxidizes. The final morphological situation is a porous silicon layer which contains platinum nuclei formed by filling pits originated in the first stages of the deposition process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 275
Copyright
Copyright © Materials Research Society 1997

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References

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