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Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth (SEG)

Published online by Cambridge University Press:  21 February 2011

Haw Yen ,
Rashid Bashir ,
Eric P. Kvam  and
Gerold W. Neudeck
Haw Yen
Affiliation:
Schools of Materials Engineering, Purdue University, West Lafayette, IN 47907
Rashid Bashir
Affiliation:
Electrical Engineering, Purdue University, West Lafayette, IN 47907
Eric P. Kvam
Affiliation:
Schools of Materials Engineering, Purdue University, West Lafayette, IN 47907
Gerold W. Neudeck
Affiliation:
Electrical Engineering, Purdue University, West Lafayette, IN 47907
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Abstract

Selective epitaxial growth has been used to produce electronically isolated devices on patterned-oxide Si substrates. The oxide / silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects at the interfacial regions are examined by transmission electron microscopy, and the defects observed are correlated to electronic behavior of diodes fabricated in the selectively grown Si region. Process modifications were made to reduce the density of these defects. The nature of the successful techniques for defect reduction suggests that a large portion of the defects were due to thermal expansion mismatch, and may be avoidable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 195
Copyright
Copyright © Materials Research Society 1994

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