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Measurement of Stress-strain Curves of PECVD Silicon Oxide Thin Films by Means of Nanoindentation

Published online by Cambridge University Press:  26 February 2011

Zhiqiang Cao  and
Xin Zhang
Zhiqiang Cao
Affiliation:
[email protected], Boston University, Dept. of Manufacturing Engineering, 15 Saint Mary's Street, Brookline, MA, 02446, United States
Xin Zhang
Affiliation:
[email protected], Boston University, Dept. of Manufacturing Engineering, 15 Saint Mary's Street, Brookline, MA, 02446, United States
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Abstract

In this paper, we explore the use of nanoindentation techniques as a method of measuring equivalent stress-strain curves of the PECVD SiOx thin films. Three indenter tips with different geometries were adopted in our experiments, enabling us to probe different regimes of plastic deformation in the PECVD SiOx thin films. A shear transformation zone (STZ) based amorphous plasticity theory is applied to depict the underlying plastic deformation mechanism.

Keywords

plasma-enhanced CVD (PECVD) (deposition)oxidestress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 977: Symposium FF – Processing-Structure-Mechanical Property Relations in Composite Materials , 2006 , 977-FF04-23
Copyright
Copyright © Materials Research Society 2007

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